IEC 62396-4:2013(E) provides guidance on atmospheric radiation effects and their management on high voltage (nominally above 200 V) avionics electronics used in aircraft operating at altitudes up to 60 000 ft (18,3 km). This part of IEC 62396 defines the effects of that environment on high voltage electronics and provides design considerations for the accommodation of those effects within avionics systems. This part of IEC 62396 provides technical data and methodology for aerospace equipment manufacturers and designers to standardise their approach to single event effects on high voltage avionics by providing guidance, leading to a standard methodology. This publication is to be read in conjunction with \/2.<\/p>\n
| PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
|---|---|---|---|---|---|---|---|
| 4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
| 5<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
| 6<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 4 Potential high voltage single event effects <\/td>\n<\/tr>\n | ||||||
| 8<\/td>\n | 5 Quantifying single event burnout in avionics for high voltage devices <\/td>\n<\/tr>\n | ||||||
| 9<\/td>\n | 6 Relevant SEB data and applying it to avionics 6.1 SEB data from heavy ion testing is not relevant 6.2 SEB data from high energy neutron and proton testing <\/td>\n<\/tr>\n | ||||||
| 10<\/td>\n | Figures Figure 1 \u2013 SEB cross sections measured in 400\u00a0V and 500\u00a0V MOSFETs for WNR neutron and proton beams <\/td>\n<\/tr>\n | ||||||
| 11<\/td>\n | Figure 2 \u2013 SEB cross sections measured in 1 000 V MOSFETs and 1 200 V IGBTs with WNR neutron and 200 MeV proton beams <\/td>\n<\/tr>\n | ||||||
| 12<\/td>\n | 6.3 Calculating the SEB rate at aircraft altitudes 6.4 Measurement of high voltage component radiation characteristics, EPICS <\/td>\n<\/tr>\n | ||||||
| 13<\/td>\n | Figure 3 \u2013 Measurement of radiation event charge and current <\/td>\n<\/tr>\n | ||||||
| 14<\/td>\n | 6.5 Single event burnout due to thermal neutrons Figure 4 \u2013 EPICS plot of 1 200 V diode numbers of events at currents taken at different applied voltages for a neutron fluence of approximately 3,5 \u00d7 10 9 neutrons per cm2 measured at energies greater than 10 MeV Figure 5 \u2013 EPICS plot of 1 200 V diode numbers of events at currents taken at 675 V \n(56 %) and 900 V (75 %) applied voltage (stress) demonstrating the difference \nbetween low and high voltage stress \u2013 Fluence as per Figure 4 <\/td>\n<\/tr>\n | ||||||
| 15<\/td>\n | 6.6 Alternative semiconductor materials to silicon 7 Conclusion <\/td>\n<\/tr>\n | ||||||
| 17<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Process management for avionics. Atmospheric radiation effects – Design of high voltage aircraft electronics managing potential single event effects<\/b><\/p>\n |