{"id":233981,"date":"2024-10-19T15:15:37","date_gmt":"2024-10-19T15:15:37","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-62047-332019\/"},"modified":"2024-10-25T09:46:58","modified_gmt":"2024-10-25T09:46:58","slug":"bs-iec-62047-332019","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-62047-332019\/","title":{"rendered":"BS IEC 62047-33:2019"},"content":{"rendered":"
This part of IEC 62047 defines terms, definitions, essential ratings and characteristics, as well as test methods applicable to MEMS piezoresistive pressure-sensitive device. This document applies to piezoresistive pressure-sensitive devices for automotive, medical treatment, electronic products.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 1 Scope 2 Normative references <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 3 Terms and definitions Figures Figure 1 \u2013 Structure schematic diagram of the device <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 4 Essential ratings and characteristics 4.1 Ratings (Limiting values) 4.2 Recommended operating conditions 4.3 Characteristics Table 1 \u2013 Characteristics of the device <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 5 Test methods 5.1 Input resistance 5.2 Output resistance 5.3 Leakage current 5.3.1 P-N junction isolation type sensitive device <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 5.3.2 Insulating medium type sensitive device 5.4 Breakdown voltage 5.5 Isolation voltage 5.6 Static performances 5.6.1 Test method Figure 2 \u2013 Test connection graph for P-N junction isolation type sensitive device Figure 3 \u2013 Test connection graph for insulating medium type sensitive device <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | Figure 4 \u2013 Test system <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | 5.6.2 Output under normal pressure 5.6.3 Zero output <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 5.6.4 Output symmetry 5.6.5 Full-span output 5.6.6 Nonlinearity 5.6.7 Pressure hysteresis <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 5.6.8 Repeatability <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 5.6.9 Accuracy 5.6.10 Sensitivity 5.6.11 Zero drift <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | 5.7 Stability 5.7.1 Test method 5.7.2 Zero long-term stability 5.7.3 Sensitivity long-term stability 5.8 Temperature influence 5.8.1 Test method <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | 5.8.2 Thermal zero drift 5.8.3 Thermal sensitivity drift 5.8.4 Thermal zero output hysteresis 5.8.5 Thermal sensitivity hysteresis <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | 5.8.6 Temperature hysteresis 5.9 Static pressure influence 5.9.1 Two way static pressure <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | 5.9.2 Unidirectional static pressure 5.10 Overload 5.11 Dynamic performance 5.11.1 Test method <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | 5.11.2 Frequency response 5.11.3 Ringing frequency 5.11.4 Damping ratio Figure 5 \u2013 The output wave <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | 5.11.5 Rise time 5.11.6 Resonant frequency 5.11.7 Overshoot 5.12 Environment test 5.12.1 Storage at high temperature 5.12.2 Storage at low temperature <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | 5.12.3 Temperature cycling 5.12.4 Vibration 5.12.5 Mechanical shock 5.12.6 Acceleration 5.12.7 Moisture resistance 5.12.8 Mucedine 5.12.9 Salt atmosphere <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | 5.12.10 Electromagnetic compatibility 5.12.11 Low pressure 5.12.12 High temperature electric life 5.12.13 Fatigue life <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Micro-electromechanical devices – MEMS piezoresistive pressure-sensitive device<\/b><\/p>\n |