{"id":233873,"date":"2024-10-19T15:15:08","date_gmt":"2024-10-19T15:15:08","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-60747-92019\/"},"modified":"2024-10-25T09:46:10","modified_gmt":"2024-10-25T09:46:10","slug":"bs-iec-60747-92019","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-60747-92019\/","title":{"rendered":"BS IEC 60747-9:2019"},"content":{"rendered":"

This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).<\/p>\n

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PDF Pages<\/th>\nPDF Title<\/th>\n<\/tr>\n
2<\/td>\nundefined <\/td>\n<\/tr>\n
4<\/td>\nEnglish
CONTENTS <\/td>\n<\/tr>\n
9<\/td>\nFOREWORD <\/td>\n<\/tr>\n
11<\/td>\n1 Scope
2 Normative references
3 Terms and definitions
3.1 General terms <\/td>\n<\/tr>\n
12<\/td>\n3.2 Terms related to ratings and characteristics, voltages and currents <\/td>\n<\/tr>\n
15<\/td>\n3.3 Terms related to ratings and characteristics <\/td>\n<\/tr>\n
17<\/td>\n4 Letter symbols
4.1 General <\/td>\n<\/tr>\n
18<\/td>\n4.2 Graphical symbols
4.3 Additional general subscripts
4.4 List of letter symbols
4.4.1 Voltages
Figures
Figure 1 \u2013 Graphical symbols <\/td>\n<\/tr>\n
19<\/td>\n4.4.2 Currents
4.4.3 Other electrical magnitudes <\/td>\n<\/tr>\n
20<\/td>\n4.4.4 Time
4.4.5 Thermal magnitudes
5 Essential ratings and characteristics
5.1 General
5.2 Ratings (limiting values)
5.2.1 General
5.2.2 Ambient or case or virtual junction operating temperature (Ta or Tc or Tvj)
5.2.3 Storage temperature (Tstg)
5.2.4 Collector-emitter voltage with gate-emitter short-circuited (VCES) <\/td>\n<\/tr>\n
21<\/td>\n5.2.5 Gate-emitter voltage with collector-emitter short-circuit (VGES)
5.2.6 Continuous (direct) reverse voltage of a reverse-blocking IGBT (VR*)
5.2.7 Continuous (direct) collector current (IC)
5.2.8 Repetitive peak collector current (ICRM)
5.2.9 Non-repetitive peak collector current (ICSM)
5.2.10 Continuous (direct) reverse-conducting current of a reverse-conducting IGBT (IRC)
5.2.11 Repetitive peak reverse-conducting current of a reverse-conducting IGBT (IRCRM)
5.2.12 Non-repetitive peak reverse-conducting current of a reverse-conducting IGBT (IRCSM)
5.2.13 Total power dissipation (Ptot)
5.2.14 Maximum forward biased safe operating area (FBSOA) (where appropriate)
5.2.15 Maximum reverse biased safe operating area (RBSOA) <\/td>\n<\/tr>\n
22<\/td>\n5.2.16 Maximum short-circuit safe operating area (SCSOA)
5.2.17 Maximum terminal current (ItRMS) (where appropriate)
5.2.18 Mounting force (F)
5.2.19 Mounting torque (M)
5.3 Characteristics
5.3.2 Collector-emitter breakdown voltage (V(BR)CES) (where appropriate)
5.3.3 Collector-emitter sustaining voltage (VCE*sus) (where appropriate)
5.3.4 Collector-emitter saturation voltage (VCEsat)
5.3.5 Gate-emitter threshold voltage (VGE(th))
5.3.6 Reverse-conducting voltage of a reverse-conducting IGBT (VRC)
5.3.7 Collector-emitter cut-off current (ICE*)
5.3.8 Gate leakage current (IGES) <\/td>\n<\/tr>\n
23<\/td>\n5.3.9 Reverse current of a reverse-blocking IGBT (IR*)
5.3.10 Capacitances
5.3.11 Gate charge (QG)
5.3.12 Internal gate resistance (rg)
5.3.13 Switching characteristics <\/td>\n<\/tr>\n
24<\/td>\n5.3.14 Thermal resistance junction to case (Rth(j-c))
5.3.15 Thermal resistance junction to ambient (Rth(j-a))
5.3.16 Transient thermal impedance junction to case (Zth(j-c)) <\/td>\n<\/tr>\n
25<\/td>\n5.3.17 Transient thermal impedance junction to ambient (Zth(j-a))
6 Measuring methods
6.1 General
6.2 Verification of ratings (limiting values)
6.2.1 General
6.2.2 Collector-emitter voltages (VCES, VCER, VCEX)
Tables
Table 1 \u2013 Acceptance defining characteristics <\/td>\n<\/tr>\n
26<\/td>\n6.2.3 Reverse voltage of a reverse-blocking IGBT (VRS, VRX)
Figure 2 \u2013 Circuit for testing the collector-emitter voltages VCES, VCER, VCEX <\/td>\n<\/tr>\n
27<\/td>\n6.2.4 Gate-emitter voltage with collector-emitter short-circuit (\u00b1VGES)
Figure 3 \u2013 Circuit for testing the reverse voltages VRS, VRX <\/td>\n<\/tr>\n
28<\/td>\n6.2.5 Continuous (direct) collector current (IC)
Figure 4 \u2013 Circuit for testing the gate-emitter voltage \u00b1VGES <\/td>\n<\/tr>\n
29<\/td>\n6.2.6 Maximum peak collector current (ICRM and ICSM)
Figure 5 \u2013 Circuit for testing collector current <\/td>\n<\/tr>\n
30<\/td>\n6.2.7 Continuous (direct) reverse-conducting current of a reverse-conducing IGBT (IRC)
Figure 6 \u2013 Circuit for testing peak collector current
Figure 7 \u2013 Circuit for testing reverse-conducting current <\/td>\n<\/tr>\n
31<\/td>\n6.2.8 Maximum peak reverse-conducting current of a reverse-conducting IGBT (IRCRM and IRCSM)
Figure 8 \u2013 Circuit for testing peak reverse-conducting current <\/td>\n<\/tr>\n
32<\/td>\n6.2.9 Maximum reverse biased safe operating area (RBSOA)
Figure 9 \u2013 Circuit for testing reverse biased safe operating area (RBSOA) <\/td>\n<\/tr>\n
33<\/td>\nFigure 10 \u2013 Waveforms of gate-emitter voltage VGE and collector current IC during turn-off <\/td>\n<\/tr>\n
34<\/td>\n6.2.10 Maximum short-circuit safe operating area (SCSOA)
Figure 11 \u2013 Circuit for testing safe operating pulse width at load short-circuit (SCSOA1)
Figure 12 \u2013 Waveforms of gate-emitter voltage VGE, collector current IC and collector-emitter voltage VCE during load short-circuit condition SCSOA1 <\/td>\n<\/tr>\n
35<\/td>\nFigure 13 \u2013 Circuit for testing short-circuit safe operating area 2 (SCSOA2) <\/td>\n<\/tr>\n
36<\/td>\nFigure 14 \u2013 Waveforms during SCSOA2 <\/td>\n<\/tr>\n
37<\/td>\n6.3 Methods of measurement
6.3.1 Collector-emitter saturation voltage (VCEsat)
Figure 15 \u2013 Circuit for measuring the collector-emitter saturation voltage VCEsat <\/td>\n<\/tr>\n
38<\/td>\n6.3.2 Gate-emitter threshold voltage (VGE(th))
6.3.3 Reverse-conducting voltage of a reverse-conducting IGBT (VRC)
Figure 16 \u2013 Circuit for measuring the gate-emitter threshold voltage <\/td>\n<\/tr>\n
39<\/td>\n6.3.4 Collector cut-off current (ICES, ICER, ICEX)
Figure 17 \u2013 Circuit for measuring the reverse-conducting voltage VRC <\/td>\n<\/tr>\n
40<\/td>\n6.3.5 Gate leakage current (IGES)
Figure 18 \u2013 Circuit for measuring the collector cut-off current <\/td>\n<\/tr>\n
41<\/td>\n6.3.6 Reverse current of a reverse-blocking IGBT (IRS, IRX)
Figure 19 \u2013 Circuit for measuring the gate leakage current <\/td>\n<\/tr>\n
42<\/td>\n6.3.7 Input capacitance (Cies)
Figure 20 \u2013 Circuit for measuring the reverse current <\/td>\n<\/tr>\n
43<\/td>\n6.3.8 Output capacitance (Coes)
Figure 21 \u2013 Circuit for measuring the input capacitance <\/td>\n<\/tr>\n
44<\/td>\nFigure 22 \u2013 Circuit for measuring the output capacitance <\/td>\n<\/tr>\n
45<\/td>\n6.3.9 Reverse transfer capacitance (Cres)
6.3.10 Gate charge (QG)
Figure 23 \u2013 Circuit for measuring the reverse transfer capacitance <\/td>\n<\/tr>\n
46<\/td>\nFigure 24 \u2013 Circuit for measuring the gate charge
Figure 25 \u2013 Basic gate charge waveform <\/td>\n<\/tr>\n
47<\/td>\n6.3.11 Internal gate resistance (rg)
Figure 26 \u2013 Circuit for measuring the internal gate resistance <\/td>\n<\/tr>\n
48<\/td>\n6.3.12 Turn-on times (td(on), tr, ton) and turn-on energy (Eon)
Figure 27 \u2013 Circuit for measuring turn-on times and energy <\/td>\n<\/tr>\n
49<\/td>\nFigure 28 \u2013 Waveforms during turn-on times <\/td>\n<\/tr>\n
50<\/td>\n6.3.13 Turn-off times (td(off), tf, toff, tz) and turn-off energy (Eoff)
Figure 29 \u2013 Circuit for measuring turn-off times and energy
Figure 30 \u2013 Waveforms during turn-off times <\/td>\n<\/tr>\n
51<\/td>\n6.3.14 Peak reverse recovery current (Irrm), reverse recovery time (trr), reverse recovery energy (Err) and reverse recovered charge (Qrr) of a reverse-blocking IGBT <\/td>\n<\/tr>\n
52<\/td>\nFigure 31 \u2013 Circuit for measuring reverse recovery characteristics
Figure 32 \u2013 Waveforms during reverse recovery <\/td>\n<\/tr>\n
54<\/td>\n6.3.15 Peak forward recovery current (Ifrm), forward recovery time (tfr), forward recovery energy (Efr) and forward recovered charge (Qfr) of a reverse-conducting IGBT
Figure 33 \u2013 Circuit for measuring forward recovery characteristics <\/td>\n<\/tr>\n
55<\/td>\nFigure 34 \u2013 Waveforms during forward recovery <\/td>\n<\/tr>\n
56<\/td>\n6.3.16 Thermal resistance junction to case (Rth(j-c)) and transient thermal impedance junction to case (Zth(j-c)) <\/td>\n<\/tr>\n
57<\/td>\nFigure 35 \u2013 Circuit for measuring the variation with temperature of the collector-emitter voltage VCE at a low measuring current IC1 and for heating up the IGBT by a high current IC2 <\/td>\n<\/tr>\n
58<\/td>\nFigure 36 \u2013 Typical variation of the collector-emitter voltage VCE at a low measuring current IC1 with the case temperature Tc (when heated from outside, i.e. Tc = Tvj) <\/td>\n<\/tr>\n
59<\/td>\nFigure 37 \u2013 IC, VCE and Tc with time <\/td>\n<\/tr>\n
60<\/td>\nFigure 38 \u2013 Circuit for measuring thermal resistanceand transient thermal impedance: Method 2 <\/td>\n<\/tr>\n
61<\/td>\nFigure 39 \u2013 Typical variation of the gate-emitter threshold voltage VGE(th)at a low measuring current IC1 with the case temperature Tc(when heated from the outside, i.e. Tc = Tvj) <\/td>\n<\/tr>\n
62<\/td>\n7 Acceptance and reliability
7.1 General requirements
7.2 Specific requirements
7.2.1 List of endurance and reliability tests
7.2.2 Conditions for endurance and reliability tests
7.2.3 Acceptance-defining characteristics and criteria for endurance and reliability tests
Figure 40 \u2013 IC, VGE and Tc with time <\/td>\n<\/tr>\n
63<\/td>\n7.2.4 Procedure in case of a testing error
7.2.5 Endurance and reliability tests and test methods
Table 2 \u2013 Acceptance-defining characteristics for endurance and reliability tests <\/td>\n<\/tr>\n
64<\/td>\nFigure 41 \u2013 Circuit for high-temperature blockings <\/td>\n<\/tr>\n
65<\/td>\nFigure 42 \u2013 Circuit for high-temperature gate bias <\/td>\n<\/tr>\n
66<\/td>\n7.3 Type tests and routine tests
7.3.1 Type tests
Figure 43 \u2013 Circuit for intermittent operating life
Figure 44 \u2013 Expected number of cycles versus temperature rise (Tvj <\/td>\n<\/tr>\n
67<\/td>\n7.3.2 Routine tests
Table 3 \u2013 Minimum type and routine tests for IGBTs when applicable <\/td>\n<\/tr>\n
68<\/td>\nAnnexes
Annex A (normative) Measuring method for collector-emitter breakdown voltage
A.1 General
A.2 Purpose
A.3 Circuit diagram
A.4 Measurement procedure
Figure A.1 \u2013 Circuit for measuring the collector-emitter breakdown voltage <\/td>\n<\/tr>\n
69<\/td>\nA.5 Specified conditions <\/td>\n<\/tr>\n
70<\/td>\nAnnex B (normative) Measuring method for collector-emitter sustaining voltage
B.1 General
B.2 Purpose
B.3 Circuit diagram
B.4 Circuit description and requirements
Figure B.1 \u2013 Circuit for measuring the collector-emitter sustaining voltage VCE*sus <\/td>\n<\/tr>\n
71<\/td>\nB.5 Measurement procedure
B.6 Precautions to be observed
B.7 Requirements
Figure B.2 \u2013 Operating locus of the collector current <\/td>\n<\/tr>\n
72<\/td>\nB.8 Specified conditions <\/td>\n<\/tr>\n
73<\/td>\nAnnex C (normative) Measuring method for inductive load turn-off current under specified conditions
C.1 General
C.2 Purpose
C.3 Circuit diagram and waveforms
Figure C.1 \u2013 Circuit for measuring inductive load turn-off current <\/td>\n<\/tr>\n
74<\/td>\nC.4 Circuit description and requirements
C.5 Measurement procedure
C.6 Specified conditions
Figure C.2 \u2013 Waveforms of collector current IC and collector voltage VCE during turn-off <\/td>\n<\/tr>\n
75<\/td>\nAnnex D (normative) Forward biased safe operating area (FBSOA)
D.1 General
D.2 Purpose
D.3 Method 1
D.3.1 General
D.3.2 Circuit diagram
Figure D.1 \u2013 Circuit for testing forward biased safe operating area (method 1) <\/td>\n<\/tr>\n
76<\/td>\nD.3.3 Test procedure
Figure D.2 \u2013 Typical \uf044VCE versus collector-emitter voltage VCE characteristics <\/td>\n<\/tr>\n
77<\/td>\nD.3.4 Specified conditions
D.4 Method 2
D.4.1 General
D.4.2 Circuit diagram
Figure D.3 \u2013 Typical forward biased safe operating area <\/td>\n<\/tr>\n
78<\/td>\nD.4.3 Test procedure and precautions to be taken
Figure D.4 \u2013 Circuit for testing forward biased safe operating area (method 2)
Figure D.5 \u2013 Latching modeoperation waveforms
Figure D.6 \u2013 Latching mode I-V characteristics <\/td>\n<\/tr>\n
79<\/td>\nD.4.4 Specified conditions <\/td>\n<\/tr>\n
80<\/td>\nBibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Semiconductor devices – Discrete devices. Insulated-gate bipolar transistors (IGBTs)<\/b><\/p>\n\n\n\n\n
Published By<\/td>\nPublication Date<\/td>\nNumber of Pages<\/td>\n<\/tr>\n
BSI<\/b><\/a><\/td>\n2019<\/td>\n82<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"featured_media":233875,"template":"","meta":{"rank_math_lock_modified_date":false,"ep_exclude_from_search":false},"product_cat":[573,2641],"product_tag":[],"class_list":{"0":"post-233873","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-31-080-01","7":"product_cat-bsi","9":"first","10":"instock","11":"sold-individually","12":"shipping-taxable","13":"purchasable","14":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product\/233873","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/types\/product"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media\/233875"}],"wp:attachment":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media?parent=233873"}],"wp:term":[{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_cat?post=233873"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_tag?post=233873"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}