{"id":423140,"date":"2024-10-20T06:44:45","date_gmt":"2024-10-20T06:44:45","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bsi-pd-iec-tr-62878-2-82021-2\/"},"modified":"2024-10-26T12:39:24","modified_gmt":"2024-10-26T12:39:24","slug":"bsi-pd-iec-tr-62878-2-82021-2","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bsi-pd-iec-tr-62878-2-82021-2\/","title":{"rendered":"BSI PD IEC TR 62878-2-8:2021"},"content":{"rendered":"
This part of IEC 62878 describes a warpage control of active device embedded substrate along with parameters for determining warpage, which are useful during package assembly. Warpage results are explained using warpage driving force, resistance and neutral axis, for typical die embedded substrate, where the discrete active dies are placed in the core of substrate and interconnected to the substrate by direct Cu bonding. The same principles are applicable in other device embedded substrates. Even though the detailed structure of other device embedded substrates might be different, the origin and determination of the parameters of warpage are the same and thus the purpose of this report is to help engineers improve the warpage behaviours of their products by applying this principle.<\/p>\n
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
5<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 4 Warpage driving force and resistance 4.1 General 4.2 Warpage driving force 4.3 Warpage resistance Figures Figure 1 \u2013 Warpage behaviour of device embedded substrate during heating and cooling <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 4.4 Determining parameters Figure 2 \u2013 Relationship between warpage and rigidity Figure 3 \u2013 Parameters determining warpage <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | Figure 4 \u2013 Effects of dummy Cu design on warpage <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 5 Guideline for warpage of active device embedded substrate 5.1 General 5.2 Rigidity 5.3 Neutral axis Figure 5 \u2013 Neutral axis of device embedded substrate <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 5.4 Typical example of low rigidity case Figure 6 \u2013 Warpage behaviour of active device embedded substrate during heating and cooling <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 5.5 Typical example of high rigidity case Figure 7 \u2013 Measured and simulated warpage results of die embedded substrates with low rigidity <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | Figure 8 \u2013 Structure of die embedded package with high rigidity Figure 9 \u2013 Simulated results on effect of die thickness on die embedded package warpage <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 6 Conclusion <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Device embedding assembly technology – Guidelines. Warpage control of active device embedded substrate<\/b><\/p>\n |