ISO 14701:2011

$27.95

Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness

Published By	Publication Date	Number of Pages
ISO	2011-08	20

Guaranteed Safe Checkout

Categories: 71.040.40 - Chemical analysis, ISO

If you have any questions, feel free to reach out to our online customer service team by clicking on the bottom right corner. We’re here to assist you 24/7.
Email:[email protected]

Description

ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

Additional information

Published Code	ISO
Published By	International Organization for Standardization
Publication Date	2011-08
Pages Count	20
Language	English
Edition	1
File Size	481.3 KB
ICS Codes	71.040.40 - Chemical analysis

Preview PDF


PDF Format	Searchable	Printable	Preview Now

ISO 14701:2011

Related products