BS EN IEC 60749-18:2019
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Semiconductor devices. Mechanical and climatic test methods – Ionizing radiation (total dose)
| Published By | Publication Date | Number of Pages |
| BSI | 2019 | 26 |
IEC 60749-18:2019 is available as /2 which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: – updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; – addition of a Bibliography, which includes ASTM standards relevant to this test method.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | National foreword |
| 5 | English CONTENTS |
| 7 | FOREWORD |
| 9 | 1 Scope 2 Normative references 3 Terms and definitions |
| 11 | 4 Test apparatus 4.1 Choice of apparatus 4.2 Radiation source 4.3 Dosimetry system 4.4 Electrical test instruments 4.5 Test circuit board(s) |
| 12 | 4.6 Cabling 4.7 Interconnect or switching system 4.8 Environmental chamber 4.9 Irradiation temperature chamber 5 Procedure 5.1 Test plan 5.2 Sample selection and handling |
| 13 | 5.3 Burn-in 5.4 Dosimetry measurements 5.5 Lead/aluminium (Pb/Al) container 5.6 Radiation level(s) 5.7 Radiation dose rate 5.7.1 Radiation dose rate determination |
| 14 | 5.7.2 Condition A 5.7.3 Condition B 5.7.4 Condition C 5.7.5 Condition D 5.7.6 Condition E 5.8 Temperature requirements 5.8.1 Room temperature radiation 5.8.2 Elevated temperature irradiation |
| 15 | 5.8.3 Cryogenic temperature irradiation 5.9 Electrical performance measurements 5.10 Test conditions 5.10.1 Choice of test conditions 5.10.2 In-flux testing 5.10.3 Remote testing |
| 16 | 5.10.4 Bias and loading conditions 5.11 Post-irradiation procedure |
| 17 | 5.12 Extended room temperature annealing test 5.12.1 Choice of annealing test 5.12.2 Need to perform an extended room temperature annealing test 5.12.3 Extended room temperature annealing test procedure |
| 18 | 5.13 MOS accelerated annealing test 5.13.1 Choice of MOS accelerated annealing test 5.13.2 Need to perform accelerated annealing test |
| 19 | 5.13.3 Accelerated annealing test procedure 5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with intended application dose rates less than 0,5 Gy(Si)/s 5.14.1 Need to perform ELDRS testing |
| 20 | 5.14.2 Determination of whether a part exhibits ELDRS 5.14.3 Characterization of ELDRS parts to determine the irradiation conditions for production or lot acceptance testing |
| 21 | 5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or BiCMOS linear or mixed-signal devices 5.15 Test report 6 Summary |
| 22 | Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital bipolar devices |
| 23 | Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS) linear or mixed-signal devices |
| 24 | Bibliography |
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