BS EN 62415:2010
$86.31
Semiconductor devices. Constant current electromigration test
Published By | Publication Date | Number of Pages |
BSI | 2010 | 14 |
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This standard describes a method for conventional constant current electromigration testing of metal lines, via string and contacts.
PDF Catalog
PDF Pages | PDF Title |
---|---|
5 | English CONTENTS |
6 | 1 Scope 2 Symbols, terms and definitions 2.1 Symbols 2.2 Terms and definitions |
7 | 3 Background 4 Sample size 5 Test structures 5.1 Lines Figures Figure 1 – TEG of electromigration evaluation for metal line |
8 | 5.2 Via chains 5.3 Contact chains 6 Test conditions Figure 2 – TEG of electromigration evaluation for vias |
9 | 7 Failure criteria 8 Data analysis Figure 3 – Graph fitted lognormal distribution |
10 | Figure 4 – Estimate procedure of current density exponent |
11 | Figure 5 – Estimation procedure of activation energy |
12 | Bibliography |
Status | Definitive |
---|---|
Pages | 14 |
Publication Date | 2010-07-31 |
ISBN | 978 0 580 61882 6 |
Standard Number | BS EN 62415:2010 |
Title | Semiconductor devices. Constant current electromigration test |
Identical National Standard Of | IEC 62415:2010, EN 62415:2010 |
Descriptors | Constant, Electrical measurement, Electrons, Semiconductors, Transistors, Electronic equipment and components, Ions, Semiconductor devices, Electric current |
Publisher | BSI |
Committee | EPL/47 |
ICS Codes | 31.080.01 - Semiconductor devices in general |
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