ASTM-F76 2002

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F76-86(2002) Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

Published By	Publication Date	Number of Pages
ASTM	2002	13

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Description

1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements.

1.1.1 Test Method A, van der Pauw (1) -This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier.

1.1.2 Test Method B, Parallelepiped or Bridge TypeThis test method requires a specimen homogeneous in thickness and of specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier.

1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given.

Note 1Practice F 418 covers the preparation of gallium arsenide phosphide specimens.

1.3 The method in Practice F 418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user.

1.4 Interlaboratory tests of these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity.

1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. (See also 3.1.4.)

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

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PDF Pages	PDF Title
1	Scope Referenced Documents Terminology
2	Significance and Use Interferences TABLE 1
3	Summary of Test Method Apparatus
4	FIG. 1 FIG. 2
5	Test Specimen Requirements Measurement Procedure FIG. 3
6	Calculations FIG. 4
7	Summary of Test Method Apparatus FIG. 5
8	FIG. 6
9	Test Specimen Requirements FIG. 7
10	Measurement Procedure FIG. 8
11	Calculations Report Precision and Bias Keywords
12	X1. INTERPRETATION X1.1 X1.2 X1.3 X1.4
13	X1.5 X1.6 REFERENCES

Additional information

Standard Title	F76-86(2002) Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
Published Code	ASTM
Publication Date	2002
Pages Count	13

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ASTM-F76 2002

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