ASTM-C863 2005
$35.75
C863-00(2005) Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
| Published By | Publication Date | Number of Pages |
| ASTM | 2005 | 2 |
ASTM C863-00-Reapproved2005
Historical Standard: Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
ASTM C863
Scope
1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO2) and its attendant crystalline growth.
1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
Keywords
oxidation; refractories; silicon carbide
ICS Code
ICS Number Code n/a
DOI: 10.1520/C0863-00R05
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 1 | Scope Referenced Documents Significance and Use Apparatus Test Specimen Conditions |
| 2 | Procedure Report Precision and Bias Keywords TABLE 1 |
